Trina Solar hits 25.04 percent efficiency for large-area IBC mono-crystalline silicon solar cell

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Trina Solar says its State Key Laboratory (SKL) of PV Science and Technology (PVST) has achieved 25.04% total-area efficiency for a large-area (243.18 cm2) n-type mono-crystalline silicon (c-Si) Interdigitated Back Contact (IBC) solar cell, with open-circuit voltage up to 715.6 mV. The result was independently certified by Japan Electric Safety and Environmental Technology Laboratory (JET) and is now the leader in that efficiency category.

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IBC solar cell explained

The IBC solar cell is the most complicated but with the highest cell efficiency for mass production c-Si solar cell today. The record-breaking n-type mono-crystalline silicon solar cell was fabricated on a large-sized industrial phosphorous-doped Cz Silicon substrate with a low-cost industrial IBC process, featuring conventional tube doping technologies and fully screen-printed metallization.

The 6-inch solar cell reached a total-area efficiency of 25.04% as independently measured by JET in Japan. The IBC solar cell has a total measured area of 243.18cm2 and was measured without any aperture. The champion cell presents the following characteristics: an open-circuit voltage Vocof 715.6 mV, a short-circuit current density Jsc of 42.27 mA/cm2 and a fill factor FF of 82.81%. It has been demonstrated to be the first single-junction c-Si solar cell developed in China to attain an efficiency above 25%, and also has been demonstrated to be the highest efficiency c-Si single junction solar cell based on a 6-inch large-area c-Si substrate.

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